I, Usage
This equipment is mainly for universities, research institutes and
enterprises in sintering of semi-conductive ceramic substrate (MCM
substrate of electronic ceramic materials) in protective
atmosphere. It is not only suitable for the sintering of electronic
materials such as aluminum nitride, but also applied to high
temperature sintering of ceramic and metal materials.
II, Main Technical Parameters
1. Power: 50KW
2. Rated voltage: 380V , three phase heating
3. Rated temperature: 1900℃
4. Working area size: 200×200
5. Temperature control method: thermocouple and infrared
6. Ultimate vacuum: 20Pa
7. Temperature uniformity10℃
III, Structure Characteristics
1. All stainless steel inner and outer layer, aluminum alloy frame,
fine appearance, easy operation, export equipment. The electrode
structure of this equipment is patented products. Graphite is the
heating element.
2. Carbon felt insulation, special structure is suitable for
atmosphere production.
3. Loading from the bottom, flexible shaft drive, smooth lifting
and free noise.
4. Direct mechanical vacuum pump, automatic operation.
5. PLC automatic control, multi-fault alarm and protection.